艱難的驅(qū)動(dòng)要求推動(dòng)設(shè)計(jì)師邁向新的功率IC技術(shù)

　　場(chǎng)效應(yīng)管（MOSFET半導(dǎo)體驅(qū)動(dòng)技術(shù)，HEMT）和IGBTs（絕緣柵雙極型晶體管）都做得很好的時(shí)候提供更為劃算，但他們正在努力跟上日益增加的性能要求的寬帶隙（WBG）功率半導(dǎo)體集成電路–像GaN和SiC–，取代硅MOSFET作為功率集成電路。

　　的要求包括較低的開(kāi)關(guān)損耗，更高的抗噪聲性，更短的傳播延遲，和更高的電壓和電流的能力，在更高的開(kāi)關(guān)頻率。處理所有這些，在更嚴(yán)格的形式因素，正在成為驅(qū)動(dòng)設(shè)備提供商面臨的主要挑戰(zhàn)。

　　The latest generation of 600 V and 650 V MOSFETs have come a long way in satisfying increasing demands of switch-mode power supply （SMPS）， uninterruptable power supply （UPS）， motor drive， inverter， converter， induction heating， wind-power， and photovoltaic systems. However， it’s getting difficult to satisfy the increasing demands of these applications. WBG semiconductor devices based on GaN and SiC technologies appear to be the answer to answering those driver demands.

　　Switching frequencies of 20 kHz are common for IGBTs and MOSFETs. However， there are newer WBG drivers that offer higher performance levels， but at what price？